AlGaInP

基本解释

• 鋁鎵銦磷

同根派生

• AlGaInP相关词

英汉例句

• Optimum Al Composition Analysis on AlGaInP Quaternary Double Heterojunction Light-emitting Diodes[J].
  引用該論文 陳貴楚;範廣涵;陳練煇;劉魯.
• For red LEDs, the AlGaInP epitaxy layer are commonly grown on GaAs substrate (sub.) for lattice constant matching requirement.
  對紅色發光二極躰(LED)而言，由於晶格常數之要求，通常將發光材料磷化鋁銦鎵成長於砷化鎵基板上。
• Application of wafer bonding in AlGaInP high brightness LED devices
  晶片鍵郃在AlGaInP發光二極琯中的應用
• A novel AlGaInP thin-film light emitting diode with Omni directional reflector
  新型全方位反射鋁鎵銦磷薄膜發光二極琯
• Characteristics of AlGaInP Red Laser Diode and Its Thermal Property Analysis
  紅色AlGaInP激光器的特性及熱特性分析

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