EUV

基本解释

It was simultaneously observed by RHESSI at hard X-ray wavelengths, by TRACE at EUV wavelengths and by SOHO/MDI .
幾乎在同一時刻;RHESSI在硬X射線波段、TRACE在極紫外波段、SOHO/MDI也觀測到這一爆發事件.
Some key technologies on soft X-ray and Extreme Ultraviolet(EUV) optics developed at CIOMP are reviewed in this paper.
綜述了我所軟X射線-極紫外波段關鍵技術的研究進展。
An imaging system based on MCP (MicroChannel plate) detector is designed to image the extreme ultraviolet (EUV) light at 30.4 nm.
本文基於微通道板MCP(Microchannel Plate)探測器件設計一套成像系統;用於對波長爲30.;4 nm的極紫外EUV(Extreme Ultraviolet)光進行成像
Some progress on top-down nano-fabrication, such as electron beam lithography,X-ray lithography and EUV lithography were introduced.
介紹了電子束曝光技術、EUV光刻技術和X射線光刻技術的進展;
For its part, Intel remains confident that EUV will be needed once the spacing between transistors reaches less than 50 nanometers.
但英特爾方麪卻依然信心十足，認爲儅電晶躰的間距小於50奈米時，就會需要EUV。