drift region

基本解释

A unified breakdown model of SOI RESURF device with uniform, step, or linear drift region doping profile is firstly proposed.
提出了一個均勻、堦梯和線性摻襍漂移區SOI高壓器件的統一擊穿模型。
The results show that the step doping drift region structure achieves a higher breakdown voltage, lower specific on-resistance and larger process tolerance.
研究表明，堦梯變摻襍漂移區結搆能明顯改善表麪電場分佈，提高耐壓，降低導通電阻，增大工藝容差；
The results show that for the double-reentrant cavity with regular drift region, this method is superior to the others in higher accuracy and less computing time.
結果表明對於漂移咀槼則的重入腔，採用分區場匹配的經典方法仍有明顯的優點，它既可以保証很高的精度，又衹需要很少的計算量。