low-dielectric

基本解释

Various CVD technologies for preparing low dielectric constantmaterials in ULSI circuits are summarized.
综述了制备ULSI低介电常数材料的各种CVD技术。
Fluorin doped DLC films have low dielectric constant, and furthermore they are hydrophobe and anti-corrupttion.
掺氟DLC膜在憎水性、耐蚀性、热稳定性和降低介电常数等方面更为优异；
Dual damascene technology of Cu / low dielectric layer is introduced in this paper, andthis technology has been used in manufacturing DRAM and logic devices.
介绍了铜/低介电常数介电层的双嵌入式工艺,该工艺已大规模应用于动态记忆存储器(DRAM)和逻辑电路器件中。
In order to alleviate the problems, low dielectric constant (k) materials are used to replace the conventional intermetal dielectric (IMD), SiO2.
为了改善这些问题，使用低介电常数材料作为导线间的介电层为必要选择。
Dual damascene technology of Cu/ low dielectric layer is introduced in this paper, andthis technology has been used in manufacturing DRAM and logic devices.
介绍了铜/介电常数介电层的双嵌入式工艺,该工艺已大规模应用于动态记忆存储器(RAM)逻辑电路器件中。