bipolar speed

基本解释

Complementary bipolar(CB) processes used for high-speed op-amp IC's are examined in the paper.
本文对目前国内外制作高速集成运算放大器新采用的互补双极（CB）工艺作了一粗略分析。
The high speed insulated gate bipolar transistor(IGBT) transport model is derived by ambipolar transport theory in this paper.
借助双极传输理论导出了高速绝缘栅双极晶体管（IGBT）传输特性的物理模型。
Pulse width modulated (PWM) inverter can generate common-mode voltage, which can produce charge-discharge current at the distant of every insulated gate bipolar transistor (IGBT) high-speed switching.
pWM逆变器在应用中会产生共模电压，共模电压在IGBT的高速开关期间产生充放电电流。