carrier recombination

基本解释

The optimization and qualification of ingots and bricks using carrier recombination and resistivity measurements.
利用载子合复寿命及电阻率量测针对硅锭，硅块进行合格检验及优化分析。
Energy gap and minority-carrier recombination lifetime are important physical parameters in the emitter of silicon transistor.
禁带宽度和少子复合寿命是硅晶体管发射区中重要的物理参数。
The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature.
确定了低温下非平衡载流子复合率及扩散速度的降低，是导致SRAM断电后数据残留的主要原因。