catalytic chemical vapor deposition
常见例句
- Polysilicon thin films are deposited by catalytic chemical vapor deposition method. The substrate temperature is 300 ℃ and catalytic hot wire is tungsten filament.
以金属钨为催化热丝，采用热丝催化化学气相沉积，在300℃的玻璃衬底上沉积多晶硅薄膜。 返回 catalytic chemical vapor deposition